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  Datasheet File OCR Text:
 Semiconductor
STC3265
NPN Silicon Transistor
Description
* Audio power amplifier application
Features
* High hFE : hFE=100~320 * Complementary pair with STA1298
Ordering Information
Type NO. STC3265 Marking FA : hFE rank Package Code SOT-23
Outline Dimensions
2.40.1 1.300.1
unit : mm
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
2.90.1
1.12 Max.
0~0.1
KST-2016-000
0.124
PIN Connections 1. Base 2. Emitter 3. Collector
0.38
-0.03 +0.05
1
STC3265
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
35 30 5 800 200 150 -55~150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob
Test Condition
IC=100A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
35 30 5 100 120 13 0.1 0.1 320 0.5 -
Unit
V V V A A V MHz pF
* : hFE rank / O : 100 ~ 200, Y : 160 ~ 320
KST-2016-000
2
STC3265
Electrical Characteristic Curves
Fig. 1 PC - Ta Fig. 2 IC - VBE
Fig. 3 IC - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE -
IC
KST-2016-000
3


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